Band structure of the EuO/Si interface: justification for silicon spintronics
L. L. Lev,
D. V. Averyanov,
A. M. Tokmachev,
F. Bisti,
V. A. Rogalev,
V. N. Strocov,
V. G. Storchak
January 2017
Abstract
The band offset of 1.0 eV at the EuO/Si interface attests the technological potential of the system for silicon spintronics.
Publication
J. Mater. Chem. C