Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxy
Published in Nanoscale, 2022
Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III–V semiconductors.
Recommended citation: D. Pierucci, A. Mahmoudi, M. Silly, F. Bisti, F. Oehler, G. Patriarche, F. Bonell, A. Marty, C. Vergnaud, M. Jamet, H. Boukari, E. Lhuillier, M. Pala, A. Ouerghi, "Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxy." Nanoscale 15, 5859-5868, (2022).
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