Band structure of the EuO/Si interface: justification for silicon spintronics
Published in Journal of Materials Chemistry C, 2017
The band offset of 1.0 eV at the EuO/Si interface attests the technological potential of the system for silicon spintronics.
Recommended citation: L. Lev, D. Averyanov, A. Tokmachev, F. Bisti, V. Rogalev, V. Strocov, V. Storchak, "Band structure of the EuO/Si interface: justification for silicon spintronics." Journal of Materials Chemistry C 1, 192-200, (2017).
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